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PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
Rev. 04 -- 20 April 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power convertors Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 C; see Figure 16 VGS = 10 V; ID = 15 A; Tj = 25 C Conditions Tj 25 C; Tj 175 C Tmb = 25 C; VGS = 10 V; see Figure 1 Tmb = 25 C; see Figure 2
[1]
Min -55
Typ -
Max Unit 30 100 109 175 V A W C
Static characteristics RDSon 2.4 m m
1.29 1.7
Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 17; see Figure 18 8.7 nC
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
Quick reference data ...continued Parameter total gate charge Conditions VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 17
[2][3][4]
Table 1. Symbol QG(tot)
Min -
Typ
Max Unit nC
36.2 -
Avalanche ruggedness EDS(AL)R repetitive see Figure 3 drain-source avalanche energy J
[1] [2] [3] [4]
Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by average junction temperature of 170 C. Refer to application note AN10273 for further information.
2. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1234
SOT669 (LFPAK)
3. Ordering information
Table 3. Ordering information Package Name PSMN1R7-30YL LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number
PSMN1R7-30YL
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
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NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)R EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current repetitive drain-source avalanche energy non-repetitive drain-source avalanche energy Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C see Figure 3 VGS = 10 V; Tj(init) = 25 C; ID = 100 A; Vsup 30 V; RGS = 50 ; unclamped
[2][3][4] [1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj 25 C; Tj 175 C Tj 25 C; Tj 175 C; RGS = 20 k VGS = 10 V; Tmb = 100 C; see Figure 1 VGS = 10 V; Tmb = 25 C; see Figure 1 tp 10 s; pulsed; Tmb = 25 C; see Figure 4 Tmb = 25 C; see Figure 2
[1] [1]
Min -20 -55 -55 -
Typ -
Max 30 30 20 100 100 790 109 175 175 100 790 241
Unit V V V A A A W C C A A J mJ
Source-drain diode
Avalanche ruggedness
[1] [2] [3] [4]
Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by average junction temperature of 170 C. Refer to application note AN10273 for further information.
PSMN1R7-30YL
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
3 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
120 ID (A) 100 (1)
003aac446
120 Pder (%) 80
03aa16
80
60
40
40
20
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 Tmb (C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
103 IAL (A) 102
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aac266
(1)
(2)
10
(3)
1
10-1 10-3
10-2
10-1
1 t (ms) 10 AL
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
PSMN1R7-30YL
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
4 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
104 ID (A) 103
003aad111
Limit RDSon = VDS / ID
10 s
102
(1)
100 s
10 DC
1 ms 10 ms 100 ms
1 10-1
1
10
VDS (V)
102
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ 0.5 Max 1.1 Unit K/W
10 Zth(j-mb) (K/W) 1 = 0.5 10-1
003aac456
0.2 0.1 0.05 0.02
P = tp T
10-2
single shot
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R7-30YL
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
5 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
6. Characteristics
Table 6. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage Conditions ID = 20 A; VGS = 0 V; Tj = 25 C; tav = 100 ns ID = 250 A; VGS = 0 V; Tj = 25 C ID = 250 A; VGS = 0 V; Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 14; see Figure 15 ID = 1 mA; VDS = VGS; Tj = 150 C; see Figure 15 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 15 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 30 V; VGS = 0 V; Tj = 25 C VDS = 30 V; VGS = 0 V; Tj = 150 C VGS = 16 V; VDS = 0 V; Tj = 25 C VGS = -16 V; VDS = 0 V; Tj = 25 C VGS = 4.5 V; ID = 15 A; Tj = 25 C VGS = 10 V; ID = 15 A; Tj = 150 C; see Figure 16 VGS = 10 V; ID = 15 A; Tj = 100 C; see Figure 16 VGS = 10 V; ID = 15 A; Tj = 25 C RG QG(tot) gate resistance total gate charge f = 1 MHz ID = 10 A; VDS = 12 V; VGS = 10 V; see Figure 17; see Figure 18 ID = 0 A; VDS = 0 V; VGS = 10 V ID = 10 A; VDS = 12 V; VGS = 4.5 V; see Figure 17 QGS QGS(th) QGS(th-pl) QGD VGS(pl) Ciss Coss Crss gate-source charge pre-threshold gate-source charge post-threshold gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance VDS = 12 V; see Figure 17; see Figure 18 VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 19 ID = 10 A; VDS = 12 V; VGS = 4.5 V; see Figure 17; see Figure 18 Dynamic characteristics 77.9 70 36.2 11.6 8 3.6 8.7 2.34 5057 1082 398 nC nC nC nC nC nC nC V pF pF pF Min 35 30 27 1.3 0.65 Typ 1.7 1.75 1.29 0.77 Max 2.15 2.45 1 100 100 100 2.09 2.8 2.4 1.7 1.5 Unit V V V V V V A A nA nA m m m m
Tested to JEDEC standards where applicable.
Static characteristics
PSMN1R7-30YL
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
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NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
Table 6. Symbol td(on) tr td(off) tf VSD trr Qr
Characteristics ...continued Parameter turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 20 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 20 V Conditions VDS = 12 V; RL = 0.5 ; VGS = 4.5 V; RG(ext) = 4.7 Min Typ 46 72 76 34 0.78 45 56 Max 1.2 Unit ns ns ns ns V ns nC
Tested to JEDEC standards where applicable.
Source-drain diode
300 ID 4 (A) 10 3.6 250 3.4 200 3 150 2.8 100 2.6 50 2.4 2.2 0 2 4 6 VGS (V) = 3.2
003aac449
5 RDSon (m) 4
003aac450
VGS (V) = 3.4
3
3.6 4
2 7 10 1 8 VDS (V) 10 0 50 100 150 200 ID (A) 250
0
Fig 6.
Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 7.
Drain-source on-state resistance as a function of drain current; typical values
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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7 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
200 gfs (S) 150
003aac452
80 ID (A) 60
003aac453
100
40
Tj = 150 C 50 20 25 C
0 0 20 40 60 ID (A) 80
0 0 1 2 3 V (V) 4 GS
Fig 8.
Forward transconductance as a function of drain current; typical values
003aac455
Fig 9.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
3.0
003aac451
8000 C (pF) 6000 Ciss
RDSon (m) 2.5
4000 Crss 2000
2.0
1.5
0 2 4 6 8 VGS (V) 10
1.0 2 4 6 8 VGS (V) 10
Fig 10. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values
PSMN1R7-30YL
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
80 ID (A) 60
003aad113
100 IS (A) 80
003aad114
60 40 Tj = 175 C Tj = 25 C 20 20 Tj = 25 C 0 0 1 2 3 VGS (V) 4 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) 40 Tj = 175 C
Fig 12. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
003a a c982
10-1 ID (A) 10-2 min 10-3 typ
003aab271
3 VGS (th) (V)
max
max
2 typ min 1
10-4
10-5
10-6 0 1 2 VGS (V) 3
0 -60
0
60
120
Tj (C)
180
Fig 14. Sub-threshold drain current as a function of gate-source voltage
Fig 15. Gate-source threshold voltage as a function of junction temperature
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
9 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
2 a
03aa27
VDS ID
1.5
VGS(pl) VGS(th) VGS QGS1 QGS2 QGD QG(tot)
003aaa508
1
0.5
QGS
0 -60
0
60
120
Tj (C)
180
Fig 16. Normalized drain-source on-state resistance factor as a function of junction temperature
10 VGS (V) 8
003aac448
Fig 17. Gate charge waveform definitions
6000 Ciss C (pF) Coss 4000
003aac454
6 VDS = 12 (V) 4 2000 2 Crss VDS = 19 (V)
0 0 20 40 60 QG (nC) 80
0 10-1
1
10
VDS (V)
102
Fig 18. Gate-source voltage as a function of gate charge; typical values
Fig 19. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
10 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
100 IS (A) 80
003aac447
60
40
Tj = 150 C
20
25 C
0 0.0
0.2
0.4
0.6
0.8
1.0 VSD (V)
Fig 20. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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11 of 16
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PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
E b2 L1
A c2
A2
C E1 b3
mounting base D1 H D
b4
L2
1
e
2
3
b
1/2
4
wM A c X
e
A A1 C
(A 3)
detail X L yC 0 2.5 scale 5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 b3 2.2 2.0 b4 0.9 0.7 c c2 D (1) D1(1) E(1) E1(1) max 5.0 4.8 3.3 3.1 e 1.27 H 6.2 5.8 L 0.85 0.40 L1 1.3 0.8 L2 1.3 0.8 w 0.25 y 0.1 8 0
1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62
0.25 0.30 4.10 4.20 0.19 0.24 3.80
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC MO-235 JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16
Fig 21. Package outline SOT669 (LFPAK)
PSMN1R7-30YL All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
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NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
8. Revision history
Table 7. Revision history Release date 20100420 Data sheet status Product data sheet Product data sheet Change notice Supersedes PSMN1R7-30YL_3 PSMN1R7-30YL_2 Document ID PSMN1R7-30YL_4 Modifications: PSMN1R7-30YL_3
*
Various changes to content.
20100111
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
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NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 04 -- 20 April 2010
14 of 16
NXP Semiconductors
PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN1R7-30YL
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 20 April 2010
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PSMN1R7-30YL
N-channel 30 V 1.7 m logic level MOSFET in LFPAK
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 April 2010 Document identifier: PSMN1R7-30YL

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